GaAs quantum well distributed Bragg reflection laser with AlGaAs/GaAs superlattice gratings fabricated by focused ion beam mixing
作者:
A. J. Steckl,
P. Chen,
Xuelong Cao,
Howard E. Jackson,
M. Kumar,
J. T. Boyd,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 2
页码: 179-181
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114659
出版商: AIP
数据来源: AIP
摘要:
GaAs quantum well (QW) lasers with distributed Bragg reflection (DBR) Al0.3Ga0.7As/GaAs superlattice gratings have been fabricated by the single‐step, maskless focused ion beam (FIB) mixing. 200 keV Si++FIB implantation with a beam diameter of ∼60–70 nm and a dose of 1014cm−2was used to obtain localized compositional mixing. The DBR grating period was 350 nm, corresponding to a third order grating matched to the emission from the 30 nm wide QW. Lasing operation was examined by optical pumping. With a pumping power 1.6× the threshold value, lasing modes were observed near 827 nm, with a spacing of 3 A˚ and a linewidth of 1.5 A˚. ©1995 American Institute of Physics.
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