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An x‐ray photoemission spectroscopy investigation of oxides grown on AuxSi1−xlayers

 

作者: A. Cros,   R. Saoudi,   G. Hollinger,   C. A. Hewett,   S. S. Lau,  

 

期刊: Journal of Applied Physics  （AIP Available online 1990）
卷期: Volume 67, issue 4  

页码: 1826-1830

 

ISSN:0021-8979

 

年代: 1990

 

DOI:10.1063/1.345610

 

出版商: AIP

 

数据来源: AIP

 

摘要:

X‐ray photoemission spectroscopy was used to analyze the oxide grown at low temperature on AuxSi1−xfilms. It was found that the oxide is stoichiometric SiO2, but is structurally distinct from oxides grown on Si at high temperatures (950 °C). Also, unoxidized Au‐Si atom inclusions were observed in the oxide. The composition of the inclusions is dependent on the initial bulk AuxSi1−xcomposition.

 

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