High‐speed modulation of strained‐layer InGaAs‐GaAs‐AlGaAs ridge waveguide multiple quantum well lasers
作者:
S. D. Offsey,
L. F. Lester,
W. J. Schaff,
L. F. Eastman,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 58,
issue 21
页码: 2336-2338
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.104914
出版商: AIP
数据来源: AIP
摘要:
Strained‐layer In0.35Ga0.65As‐GaAs‐AlGaAs graded index separate confinement heterostructure multiple quantum well lasers were grown by molecular beam epitaxy and processed as ridge waveguide structures. Devices with 3 &mgr;m×200 &mgr;m cavities have threshold currents of 18 mA (3000 A/cm2) and optical waveguide losses of 4.2 cm−1. The microwave modulation bandwidth of a 3 &mgr;m×200 &mgr;m device was determined to be 19.5 GHz, which exceeds the 15.5 GHz reported for multimode index‐guided devices, and is the highest direct modulation bandwidth reported for a quantum well laser.
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