Donor‐acceptor‐type complex in GaAs—Further comment
作者:
P. J. Dean,
D. C. Herbert,
期刊:
Journal of Applied Physics
(AIP Available online 1980)
卷期:
Volume 51,
issue 4
页码: 2297-2300
ISSN:0021-8979
年代: 1980
DOI:10.1063/1.327866
出版商: AIP
数据来源: AIP
摘要:
A sharp luminescence line at 1.51165 eV with the unusual properties of very large Zeeman splittings and very small splittings under uniaxial stress compared with typical shallow bound excitons was recently reported by Reynolds, Almassy, Litton, Nam, and McCoy [J. Appl. Phys. 49, 5336 (1978)]. We show that the description favored by these authors, electron‐hole recombination at either a neutral double donor–single acceptor or a double acceptor–single donor complex, is inadequate to account for the properties they report. In particular, the effects of the local axial field of the complex on the zero field and magnetic character of the electron‐hole states have been disregarded. We discuss possible interpretations and conclude that recombination within a biexciton bound to a neutral axial complex containing a biacceptor and two single donors can give a satisfactory explanation of all the unusual properties reported for the 1.51165‐eV line.
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