Homogeneous gain saturation in 1.5 &mgr;m InGaAsP traveling‐wave semiconductor laser amplifiers
作者:
Takaaki Mukai,
Kyo Inoue,
Tadashi Saitoh,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 51,
issue 6
页码: 381-383
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.98424
出版商: AIP
数据来源: AIP
摘要:
Spectral line broadening in semiconductor lasers is studied experimentally through the gain saturation characteristics of 1.5 &mgr;m InGaAsP traveling‐wave laser amplifiers. Wide signal gain spectrum under the injection of an intense saturating signal is measured using a weak probe signal. The saturated signal gain spectrum is found to coincide exactly with the unsaturated spectrum under a less biased condition, thus verifying that the semiconductor laser gain saturateshomogeneouslyover the entire gain spectrum. Cross‐saturation characteristics between the two signal channels having identical input powers are also investigated and found to be in good agreement with theoretical calculations based on the homogeneous gain model. The degree of gain saturation is confirmed to be uniquely determined by the total output power from both channels.
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