首页   按字顺浏览 期刊浏览 卷期浏览 Properties of ultrahigh vacuum self‐implantation‐induced amorphous german...
Properties of ultrahigh vacuum self‐implantation‐induced amorphous germanium

 

作者: G. Peto,   J. Kanski,   G. Holmen,  

 

期刊: Applied Physics Letters  （AIP Available online 1989）
卷期: Volume 55, issue 7  

页码: 692-693

 

ISSN:0003-6951

 

年代: 1989

 

DOI:10.1063/1.101824

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Ge (111) was self‐implanted in ultrahigh vacuum to prepare an impurity‐free amorphous layer. The same extraordinary amorphous state of Ge was induced as that found earlier with121Sb+implantation in normal vacuum. This eliminates the possibility that this anomalousa‐Ge is impurity stabilized.

 

点击下载:  PDF (203KB)



返 回