Inelastic electron scattering and incoherent x-ray scattering in silicon at small angles
作者:
R.E. Burge,
J.E. Smart,
期刊:
Philosophical Magazine
(Taylor Available online 1968)
卷期:
Volume 17,
issue 150
页码: 1285-1288
ISSN:0031-8086
年代: 1968
DOI:10.1080/14786436808223202
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
Calculations of the intensity of incoherent x-ray scattering (Iinc) from Si at small angles have been made using the full Waller-Hartree expression for comparison with the experimental results of Weinberg (1964). The agreement between calculation and experiment is poor for the entire angular range of the results (corresponding to q=(4π/λ)sinø/2 from 0.2 to 1.3 Å−1, where ø is the angle of scattering). Since Iincappears in the formulation of inelastic electron scattering by free atoms, it is pointed out that this formulation should be applied with caution to an interpretation of small-angle electron scattering by metal films.
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