Detection of metal induced gap states in silicon
作者:
T. A. Railkar,
S. V. Bhoraskar,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 8
页码: 974-975
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.113816
出版商: AIP
数据来源: AIP
摘要:
An experimental technique involving the measurement of thermally stimulated exoelectron emission has been shown to be capable to detecting the surface states, caused by the presence of metal impurities, at the surface of silicon. The ionization energies of the surface states induced by the thermal diffusion of silver, gold, copper, and aluminum in silicon are estimated from this technique. ©1995 American Institute of Physics.
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