To deposit PZT (Pb(Zr,Ti)O3) thin films on Pt films sputtered on thermally oxidized silicon wafers, we used Pb(thd)2, Zr(thd)4, and Ti(iOC3H7)4as metal-organic chemical vapor deposition sources. The good composition control resulting form the use of Zr(thd)4provided in-depth uniformity near the interface between Pt and deposited PZT. This uniformity was revealed by TEM observations and in-depth composition analysis using EDX with subnanometer probing radius. PZT films 80 nm thick had a leakage current of 2 × 10−7A/cm2when the applied voltage was 1.5 V, and equivalent to a SiO2thickness of 0.4 nm. The variation of composition and thickness over a 4″ wafer was about 1%. This surface uniformity achieved by optimizing the source supply and pumping system, results in the electrical uniform PZT thin films required for fabricating large-scale memory devices.