Bromine/methanol wet chemical etching of via holes for InP microwave devices
作者:
S. Trassaert,
B. Boudart,
S. Piotrowicz,
Y. Crosnier,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1998)
卷期:
Volume 16,
issue 2
页码: 561-564
ISSN:1071-1023
年代: 1998
DOI:10.1116/1.589863
出版商: American Vacuum Society
关键词: InP
数据来源: AIP
摘要:
We report on the realization of via holes on InP material (for the first time to our knowledge) using bromine/methanol wet chemical etching. Typical dimension of the via holes is about 80μm in diameter. A specific layout has been accomplished to obtain the via hole equivalent circuit. Measurements have been performed from 50 MHz to 30 GHz. They exhibit losses of 0.1 dB at 30 GHz. The via hole equivalent circuit is found to be a resistance and an inductance in serial configuration with typical values of 0.4Ωand 26 pH, respectively.
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