首页   按字顺浏览 期刊浏览 卷期浏览 Local Density of States of Amorphous Semiconductors with Defects
Local Density of States of Amorphous Semiconductors with Defects

 

作者: J. P. Gaspard,  

 

期刊: AIP Conference Proceedings  （AIP Available online 1974）
卷期: Volume 20, issue 1  

页码: 170-173

 

ISSN:0094-243X

 

年代: 1974

 

DOI:10.1063/1.2945954

 

出版商: AIP

 

数据来源: AIP

 

摘要:

For a tight binding Hamiltonian, the moments of the electronic density of states can be simply computed. From these, the density of states is obtained through a continued fraction expression of the Green function. We obtain the local density of states of a continuous random network and on a dangling bond.

 

点击下载:  PDF (104KB)



返 回