Studies on PZT precursor solutions
作者:
W. Zhuang,
T. Li,
R. Barrowcliff,
G. Stecker,
S.T. Hsu,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1999)
卷期:
Volume 26,
issue 1-4
页码: 277-284
ISSN:1058-4587
年代: 1999
DOI:10.1080/10584589908215628
出版商: Taylor & Francis Group
关键词: PZT;precursor solutions;MOCVD;thin film;ferroelectric
数据来源: Taylor
摘要:
A series of organic solvents has been used for the preparation of PZT precursor solutions. The stability and the volatility of these PZT precursors have been tested. The results indicate the promising organic solvents are butyl ether, THF, 2-methoxyethyl ether, H(tmhd) and tetraglyme. PZT precursors include Zr(tmhd)4, Zr(OPri)4(HOPri), Zr(OPri)2(tmhd)2, Pb(tmhd)2, Ti(OPri)4and Ti(OPri)2(tmhd)2, which can be dissolved in some special combinations of these organic solvents without losing volatility. However,iso-propanol should be introduced into the PZT precursor solutions if Ti(OPri)4is used as the titanium source. The preparations of PZT thin film via MOCVD have been carried out by using new PZT precursor solutions, and high quality PZT thin films have been obtained.
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