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Relationship between etch pit densities and oxygen concentrations on CdTe

 

作者: Katsuhiro Yokota,   Toshiharu Yoshikawa,   Sigeru Inano,   Takeshi Morioka,   Saichi Katayama,  

 

期刊: Applied Physics Letters  （AIP Available online 1990）
卷期: Volume 56, issue 9  

页码: 866-867

 

ISSN:0003-6951

 

年代: 1990

 

DOI:10.1063/1.102666

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The density of etch pits and the concentration of O in melt‐grown CdTe increased as the residual gas pressure in ampoules during preparation increased. The etch pit density increased proportionally to the integral strength of an infrared TeO2absorption band, which presents the oxygen concentration.

 

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