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The microstructural basis of creep of γ1in dental amalgam

 

作者: N. K. SARKAR,   C. S. EYER,  

 

期刊: Journal of Oral Rehabilitation  (WILEY Available online 1987)
卷期: Volume 14, issue 1  

页码: 27-33

 

ISSN:0305-182X

 

年代: 1987

 

DOI:10.1111/j.1365-2842.1987.tb00690.x

 

出版商: Blackwell Publishing Ltd

 

数据来源: WILEY

 

摘要:

SummaryA previous study has shown that the addition of small amounts of tin to γ1leads to the formation of a SnHg intergranular precipitate. The purpose of this study was to determine the effect of this precipitate on the creep of γ1. Two groups of samples were investigated. Group I included a series of γ1samples with 0, 1, 2, and 3wt% Sn fabricated by a sintering technique at 55°C and 125mN/m2for 72 h. Group II contained the same samples as in Group I that were further annealed at 60°C for 2000 h. Annealing was carried out to allow γ1grain growth and equilibrium distribution of Sn at grain boundaries. Creep tests were conducted according to the American Dental Association Specification 1. The microstruc‐tures of all samples were characterized by scanning electron microscopy. The creep of γ1was found to be controlled by the intergranular precipitate when the Sn concentration was above 1%. For a specific concentration of Sn, i.e. the integranular precipitate, creep was dependent on the distribution of Sn and not on the γ1grain size. The more nearly continuous precipitates found in annealed samples favoured hig

 

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