Ruthenium‐induced surface states onn‐GaAs surfaces
作者:
Matthias Ludwig,
Günter Heymann,
Peter Janietz,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1986)
卷期:
Volume 4,
issue 2
页码: 485-492
ISSN:0734-211X
年代: 1986
DOI:10.1116/1.583407
出版商: American Vacuum Society
关键词: SURFACE STATES;INTERFACE STATES;IMPURITY STATES;SCHOTTKY BARRIER DIODES;BARRIER HEIGHT;DOPING PROFILES;IMPURITIES;GALLIUM ARSENIDES;RUTHENIUM;METAL−SEMICONDUCTOR CONTACTS;ELECTRICAL PROPERTIES;INTERFACE STRUCTURE;GaAs
数据来源: AIP
摘要:
Studies were conducted to investigate the properties of the Ru–GaAs interface. An analysis was made of two sets of experimental findings, namely the distribution of surface states of GaAs covered by submonolayers of ruthenium, as well as of electrical measurements on Ru–GaAs contacts. It was found for the present case that a deep state nearEt≊0.3 eV above valence band maximum is induced at the surface. Thus the influence of the intrinsic defects is at least compensated. Using a simple model, it was investigated to which degree surface states and their energy would govern the barrier height. It was further studied how Fermi level pinning depends on the doping concentration of the semiconductor.
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