Stimulated emission in indirect band‐gap AlxGa1−xAs is observed at room temperature. This indirect stimulated emission is based on alloy disorder induced no‐phonon band‐to‐band transitions. Picosecond luminescence spectroscopy as a function of alloy composition reveals a quadratic dependence of the threshold pump intensity on the energy separation of the renormalized direct and indirect conduction bands. These threshold intensities increase exponentially with lattice temperature. The temperature dependence of the threshold intensity is much weaker than in direct band‐gap AlxGa1−xAs.