首页   按字顺浏览 期刊浏览 卷期浏览 Vacuum ultraviolet photoelectron spectroscopy of (NH4)2S‐treated GaAs (10...
Vacuum ultraviolet photoelectron spectroscopy of (NH4)2S‐treated GaAs (100) surfaces

 

作者: C. J. Spindt,   D. Liu,   K. Miyano,   P. L. Meissner,   T. T. Chiang,   T. Kendelewicz,   I. Lindau,   W. E. Spicer,  

 

期刊: Applied Physics Letters  （AIP Available online 1989）
卷期: Volume 55, issue 9  

页码: 861-863

 

ISSN:0003-6951

 

年代: 1989

 

DOI:10.1063/1.101780

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The surface chemistry and band bending of the ammonium sulfide‐treated GaAs (100) surface has been studied using surface‐sensitive synchrotron radiation photoemission spectroscopy. We find that the treatment leaves the GaAs surface terminated with roughly a monolayer of sulfur bonded to both As and Ga atoms. Ann‐type barrier height of 0.8 eV is measured. The thermal stability of the various chemical components is studied and various issues of the passivating mechanism are discussed.

 

点击下载:  PDF (355KB)



返 回