Lattice location of low‐Zimpurities in medium‐Ztargets using ion‐induced x rays. I. Analytical technique
作者:
J. F. Chemin,
I. V. Mitchell,
F. W. Saris,
期刊:
Journal of Applied Physics
(AIP Available online 1974)
卷期:
Volume 45,
issue 2
页码: 532-536
ISSN:0021-8979
年代: 1974
DOI:10.1063/1.1663278
出版商: AIP
数据来源: AIP
摘要:
The usefulness of ion‐induced x‐ray yields to detect low‐Zimpurity atoms at low concentration in medium‐Ztargets and to locate their lattice sites in single crystals is established in this and the paper that follows. In paper I we describe the technique used with specific reference to phosphorus and sulfur implants in germanium crystals. Particular attention was given to the origin of the different components that constitute the backgrounds in the x‐ray energy spectrum. Peak‐to‐background ratios for these two impurity signals were then determined for H and He ions in the energy region from 0.5 to 2.0 MeV. Some results for N and Ar ions were also obtained. A beam of 0.5‐MeV H+gave optimum conditions for foreign atom location studies.
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