Observation of silicon wafer emissivity in rapid thermal processing chambers for pyrometric temperature monitoring
作者:
J. Nulman,
S. Antonio,
W. Blonigan,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 25
页码: 2513-2515
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.102874
出版商: AIP
数据来源: AIP
摘要:
The emissivity of silicon wafers in a rapid thermal processing chamber has been measured as a function of the wafer temperature. Wafers with different surface roughness and layers have been studied. For transparent wafers, both sides of the wafer affect the emissivity. This emissivity is not only affected by surface roughness, but also by the layers deposited on the wafer. It has also been observed that while the emissivity increases rapidly as the temperature increases from its room value to 600 °C, the emissivity decreases with a slope of −8.89×10−5 °C−1for temperatures larger than 600 °C.
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