Kinetics of light induced metastable defect creation in amorphous silicon: A dispersive excitonic model for the weak bond‐dangling bond conversion
作者:
S. R. Dhariwal,
B. M. Deoraj,
期刊:
Journal of Applied Physics
(AIP Available online 1992)
卷期:
Volume 71,
issue 9
页码: 4196-4200
ISSN:0021-8979
年代: 1992
DOI:10.1063/1.350823
出版商: AIP
数据来源: AIP
摘要:
The Stutzmann, Jackson, and Tsai model [Phys. Rev. B32, 23 (1985)] for the creation of metastable defects in illuminateda‐Si:H by tail‐to‐tail recombination of electrons and holes and conversion of weak bonding and antibonding orbitals into dangling bonds has been extended to include the exponential nature of tail states and saturation of dangling bond density. A first‐order approximation of the general result gives a stretched exponential formula similar to that of Redfield and Bube [Appl. Phys. Lett.54, 1037 (1989)] removing an apparent contradiction between the two models. The theory is also extended to include the thermal annealing process. This gives an apparent saturation of dangling bond density at a steady state equilibrium valueNmwhich tends to the actual saturation valueNsas the intensity of illumination is increased.
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