Double heterostructure lasers with facets formed by a hybrid wet and reactive‐ion‐etching technique
作者:
J. Salzman,
T. Venkatesan,
S. Margalit,
A. Yariv,
期刊:
Journal of Applied Physics
(AIP Available online 1985)
卷期:
Volume 57,
issue 8
页码: 2948-2950
ISSN:0021-8979
年代: 1985
DOI:10.1063/1.335235
出版商: AIP
数据来源: AIP
摘要:
Double heterostructure lasers were fabricated in which one of the laser facets was produced by a hybrid wet and reactive‐ion‐etching technique. This technique is suitable for GaAs/GaAlAs heterostructure lasers and utilizes the selectivity of the plasma in preferentially etching GaAs over GaAlAs. Lasers fabricated by this technique are compatible with optoelectronic integration and have threshold currents and quantum efficiency comparable to lasers with both mirrors formed by cleaving. The technique enables the use of relatively higher pressures of noncorrosive gases in the etch plasma resulting in smoother mirror surfaces and further eliminates the nonreproducibility inherent in the etching of GaAlAs layers.
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