We have grown electron‐beam‐induced resist and aluminum from alkyl naphthalene and trimethyl aluminum, respectively. The growth mechanism of the electron‐beam‐induced materials has been suggested to be bridge‐formation by the physically adsorbed molecules of the sources. We believe that the bridge‐formation is driven by direct interaction with electrons, not by diffusive processes such as local heating and catalytic reactions. The observed growth rate is consistent with the one calculated from the heat of physical adsorption. The method is of potential interest for stereo‐resist and also for selective atomic layer epitaxy.