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Use of a diode laser to observe room‐temperature, low‐power optical bistability in a GaAs‐AlGaAs etalon

 

作者: S. S. Tarng,   H. M. Gibbs,   J. L. Jewell,   N. Peyghambarian,   A. C. Gossard,   T. Venkatesan,   W. Wiegmann,  

 

期刊: Applied Physics Letters  （AIP Available online 1984）
卷期: Volume 44, issue 4  

页码: 360-361

 

ISSN:0003-6951

 

年代: 1984

 

DOI:10.1063/1.94775

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Optical bistability is observed using a single‐mode diode laser in a GaAs‐AlGaAs multiple‐quantum‐well etalon with as low as six mW power at 830 nm.

 

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