Computer simulation of gallium arsenide field-effect transistors using Monte-Carlo methods
作者:
Robert A.Warriner,
期刊:
IEE Journal on Solid-State and Electron Devices
(IET Available online 1977)
卷期:
Volume 1,
issue 4
页码: 105-110
年代: 1977
DOI:10.1049/ij-ssed.1977.0013
出版商: IEE
数据来源: IET
摘要:
A gallium arsenide planar field-effect transistor (f.e.t.) structure is simulated using a particle-mesh computer model. The model incorporates two dimensions in configuration space and three dimensions ink-space; with a full description of the material scattering cross-section which is implemented using Monte-Carlo techniques. The f.e.t. static characteristic has been calculated together with the lumped equivalent-circuit paramters. A comparison is made between devices with and without substrate. Detailed information about electrostatic potential and valley population profiles is presented for the first time. Cole-Cole plots of complex output impedance are used in determining device frequency response.
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