The temperature dependence of the electrical resistivity and the magnetic susceptibility has been investigated for the compoundsUAl2,UAl3and the isostructural compoundsUX3(X=Ga, In, Si, Ge, Sn), and finally forUAl4andUGa2. The influence of a variable U concentration has been studied for the pseudobinary compoundsU1−xYxAl2andU1−xYxGa2. The results are discussed in terms of a localized‐spin‐fluctuations model. The differences and the similarities between the electrical properties of these U compounds and Ce compounds, such asCeAl2andCeAl3, are briefly discussed.