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Ion‐implanted charge collection contacts for high purity silicon detectors operated at 20 mK

 

作者: B. A. Young,   K. M. Yu,  

 

期刊: Review of Scientific Instruments  (AIP Available online 1995)
卷期: Volume 66, issue 3  

页码: 2625-2630

 

ISSN:0034-6748

 

年代: 1995

 

DOI:10.1063/1.1145599

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have developed a technique for fabricating high resolution, ohmic contacts for cryogenic silicon detectors operated at temperatures well below 1 K. In this paper, we give a detailed description of the techniques used to fabricate these boron‐implanted contacts, and present characterization data obtained on 24 test samples studied during the design phase of our program. We then describe the fabrication and operation of a 23 g prototype silicon hybrid detector which simultaneously senses both the phonons and ionization produced by a single event, and which incorporates these new contacts into its design. Finally, we present data obtained using a radioactive source of241Am and this detector operated at 20 mK, and conclude that the contacts are fully sufficient for applications in particle astrophysics as well as in many other areas of physics. ©1995 American Institute of Physics. 

 

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