Up conversion of luminescence via deep centers in high purity GaAs and GaAlAs epitaxial layers
作者:
Lucia G. Quagliano,
Heinz Nather,
期刊:
Applied Physics Letters
(AIP Available online 1984)
卷期:
Volume 45,
issue 5
页码: 555-557
ISSN:0003-6951
年代: 1984
DOI:10.1063/1.95319
出版商: AIP
数据来源: AIP
摘要:
Up‐converted band to band luminescence generated by photons with energy lower than the band gap has been observed in high purity GaAs and GaAlAs epitaxial layers as well as in undoped melt‐grown GaAs. This is explained by assuming a two‐step excitation process involving a deep center as intermediate state. Since ecah crystal investigated has shown this effect, we conclude that intrinsic defects in pure GaAs and GaAlAs crystals provide the deep levels necessary for the up conversion.
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