首页   按字顺浏览 期刊浏览 卷期浏览 Characterization of high‐purity InP by photoluminescence
Characterization of high‐purity InP by photoluminescence

 

作者: T. Inoue,   K. Kainosho,   R. Hirano,   H. Shimakura,   T. Kanazawa,   O. Oda,  

 

期刊: Journal of Applied Physics  （AIP Available online 1990）
卷期: Volume 67, issue 11  

页码: 7165-7168

 

ISSN:0021-8979

 

年代: 1990

 

DOI:10.1063/1.344547

 

出版商: AIP

 

数据来源: AIP

 

摘要:

InP polycrystals grown by the HB technique and InP single crystals grown by the liquid‐encapsulated Czochralski technique have been evaluated by photoluminescence. It was found that as the carrier concentration is decreased, the photoluminescence spectrum shows finer structures. When the carrier concentration is less than 9×1014cm−3, a strong free‐exciton peak could be observed.

 

点击下载:  PDF (428KB)



返 回