Insituprocessing of epitaxial Y‐Ba‐Cu‐O highTcsuperconducting films on (100) SrTiO3and (100) YS‐ZrO2substrates at 500–650 °C
作者:
R. K. Singh,
J. Narayan,
A. K. Singh,
J. Krishnaswamy,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 54,
issue 22
页码: 2271-2273
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.101520
出版商: AIP
数据来源: AIP
摘要:
We report the formation of excellent quality epitaxial YBa2Cu3O7films on (100) SrTiO3and (100) ZrO2(yttria stabilized) substrates in the temperature range of 500–650 °C by XECl excimer laser ablation in a 0.2 Torr oxygen ambient. By applying a dc bias voltage of +300 V to an interposing ring, we were able to reduce the substrate temperatures from 650 to 500 °C for obtaining epitaxial films. The quality of the epitaxial films was found to decrease with temperature, particularly below 550 °C. The thickness of the superconducting films was varied from 500 to 5000 A˚ with superconducting transition temperaturesTc(zero resistance) varying from 87 to 90 K for 650 °C deposits. The critical current densityJcof films was found to vary linearly with temperature with values of (zero magnetic field at 77 K) 5.0×106and 1.0×106for films deposited at 650 °C on (100) SrTiO3and (100) yttria‐stabilized zirconia substrates, respectively. X‐ray diffraction, transmission electron microscopy, electron channeling patterns, and Rutherford backscattering (RBS)/channeling showed excellent epitaxial quality of films on both substrates with best values of minimum ion channeling yield of 3.5% on (100) SrTiO3substrates.
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