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High rate masked etching of GaAs by magnetron ion etching

 

作者: R. J. Contolini,   L. A. D’Asaro,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1986）
卷期: Volume 4, issue 3  

页码: 706-713

 

ISSN:0734-211X

 

年代: 1986

 

DOI:10.1116/1.583601

 

出版商: American Vacuum Society

 

关键词: GALLIUM ARSENIDES;ETCHING;MASKING;PHOTORESISTS;ION COLLISIONS;INTEGRATED CIRCUITS;FABRICATION;MAGNETRONS;MICROELECTRONICS;SEMICONDUCTOR DEVICES;FABRICATION;ELECTRIC CONTACTS;GaAs

 

数据来源: AIP

 

摘要:

High rate masked etching of III–V materials such as GaAs and InP is needed for device processing requirements, such as via formation and chip separation. We have investigated the use of magnetron enhanced reactive ion etching to etch GaAs using photoresist as a mask. This technique gives unmasked etch rates up to 7 μm/min in GaAs. With an adequate heat sink, a photoresist mask shows little degradation for etch rates up to 1.2 μm/min with an undercut less than about 0.5 μm. Mechanisms of these results and directions for future work are presented.

 

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