High voltage GaInP/GaAs dual-material Schottky rectifiers
作者:
K. J. Schoen,
E. S. Harmon,
J. M. Woodall,
T. P. Chin,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 4
页码: 518-520
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119596
出版商: AIP
数据来源: AIP
摘要:
A dual-material structure of lattice-matched GaInP on GaAs has a calculated figure of merit which is approximately 60 times better than Si and 5 times better than GaAs. In this work, the theoretical performance of the GaInP/GaAs structure is presented and experimental data for Ni on GaInP/GaAs Schottky rectifiers is presented. The Ni on GaInP/GaAs Schottky rectifiers have a breakdown voltage of ∼80 V and low reverse leakage current. Comparable Ni on GaAs Schottky rectifiers have a breakdown voltage of ∼20 V and significantly higher reverse leakage current. The GaInP/GaAs rectifiers’ forward characteristics have a current–voltage extracted&fgr;Bnof 1.0 eV with an ideality factor of 1.06. This dual-material structure of GaInP/GaAs appears to be a promising candidate for improving power device performance.©1997 American Institute of Physics.
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