The epitaxial growth of InSbBi ternary alloys by low-pressure metalorganic chemical vapor deposition is reported on. X-ray diffraction spectra showed well resolved peaks of InSbBi and InSb films. Bi incorporation was confirmed by energy dispersive x-ray analysis. Photoresponse spectrum up to 9.3&mgr;m which corresponds to 0.13 eV energy band gap has been measured in a sample with Bi composition of 5.8 at.&percent; at 77 K. Electron mobility at room temperature ranges from 44 100 to 4910 cm2/Vs as Bi composition increases. ©1997 American Institute of Physics.