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High resolution electron beam lithography on CaF2

 

作者: P. M. Mankiewich,   H. G. Craighead,   T. R. Harrison,   A. H. Dayem,  

 

期刊: Applied Physics Letters  （AIP Available online 1984）
卷期: Volume 44, issue 4  

页码: 468-469

 

ISSN:0003-6951

 

年代: 1984

 

DOI:10.1063/1.94769

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have fabricated 30‐nm lines on 200‐nm centers in CaF2using a scanning transmission electron microscope. The lines were written by electron beam radiolysis of a fine grain polycrystalline CaF2film and reaction to CaO followed by development in H2O.

 

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