The results of modeling the application of an external electric field to disordered, strained InGaAs/GaAs single quantum well are presented. An error function profile is used to model the constituent atoms composition after interdiffusion. Results indicate that the exciton Stark shift in the disordered quantum well is greater than in the as‐grown 10 nm wide In0.2Ga0.8As well, and that the change in electroabsorption near the fundamental exciton absorption peak is enhanced by 30% in the disordered quantum well for a 30 kV/cm electric field applied perpendicular to the well. These results may be used to achieve optical modulators with improved performance characteristics in strained quantum well structures. ©1995 American Institute of Physics.