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Practical results of photomask repair using focused ion beam technology

 

作者: K. Saitoh,   H. Onoda,   H. Morimoto,   T. Katayama,   Y. Watakabe,   T. Kato,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1988）
卷期: Volume 6, issue 3  

页码: 1032-1034

 

ISSN:0734-211X

 

年代: 1988

 

DOI:10.1116/1.584343

 

出版商: American Vacuum Society

 

关键词: MASKING;REPAIR;ION BEAMS;ION COLLISIONS;AUGER ELECTRON SPECTROSCOPY;CARBON FLUORIDES;ETCHING;DEFECTS;INTEGRATED CIRCUITS;FOCUSING

 

数据来源: AIP

 

摘要:

Practical results of photomask defect repair using focused ion beam (FIB) technology are presented. From Auger electron analysis, the deposited carbon film for clear defect repair contains 22% gallium, which is an element of the ion beam. Substrate damage produced by ion beam irradiation can be removed incorporating CHF3+O2reactive ion etching. Printing results using a 5:1 stepper show that the FIB technology can be applied to photomask production.

 

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