The results of the EPR study of point defects configuration in silicon irradiated with high doses of electrons and neutrons (≤ 1018cm−2) are reported. It has been concluded that, under the chosen experimental conditions, the atom configuration of point defects changes as the result of impurities or Frenkel pair components being trapped by the already known defects. The other reason of changes of point defects configuration is the loss of the long range order in the lattice due to high damage concentration.