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Pressure Enhancement of the Net Acoustic Gain in Piezoelectric Semiconductors

 

作者: S. Zemon,   J. Zucker,   P. N. Adler,  

 

期刊: Journal of Applied Physics  (AIP Available online 1970)
卷期: Volume 41, issue 10  

页码: 4008-4010

 

ISSN:0021-8979

 

年代: 1970

 

DOI:10.1063/1.1658403

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Hydrostatic pressures of up to 16 kbar are shown to increase the net acoustoelectric gain in semiconducting CdS and CdSe. Decreasing conductivity with pressure in CdS is attributed to a decrease in both mobility and carrier concentration whereas no significant changes were observed in CdSe. The frequency of maximum gain, as calculated from linear theory, decreases with pressure in CdS.

 

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