Pressure Enhancement of the Net Acoustic Gain in Piezoelectric Semiconductors
作者:
S. Zemon,
J. Zucker,
P. N. Adler,
期刊:
Journal of Applied Physics
(AIP Available online 1970)
卷期:
Volume 41,
issue 10
页码: 4008-4010
ISSN:0021-8979
年代: 1970
DOI:10.1063/1.1658403
出版商: AIP
数据来源: AIP
摘要:
Hydrostatic pressures of up to 16 kbar are shown to increase the net acoustoelectric gain in semiconducting CdS and CdSe. Decreasing conductivity with pressure in CdS is attributed to a decrease in both mobility and carrier concentration whereas no significant changes were observed in CdSe. The frequency of maximum gain, as calculated from linear theory, decreases with pressure in CdS.
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