A model hyperfrequency differential‐mobility for nonlinear transport in semiconductors
作者:
L. Varani,
J. C. Vaissiere,
J. P. Nougier,
P. Houlet,
L. Reggiani,
E. Starikov,
P. Shiktorov,
V. Gruzhinskis,
L. Hlou,
期刊:
Journal of Applied Physics
(AIP Available online 1995)
卷期:
Volume 77,
issue 2
页码: 665-675
ISSN:0021-8979
年代: 1995
DOI:10.1063/1.359053
出版商: AIP
数据来源: AIP
摘要:
We present analytical expressions for the differential‐mobility spectra which are obtained from a linear analysis of the balance equations under stationary and homogeneous conditions. The expressions are rigorously related to an eigenvalue expansion of the response matrix and are applicable to ohmic as well as to non‐ohmic conditions. The coefficients appearing in the formula can be calculated from the knowledge of three parameters as functions of the electric field, namely, the reciprocal effective mass, the drift velocity, and the average energy of the carriers. The theory is applied to the case of holes in Si atT=300 K and validated by comparison with the results obtained by a direct numerical resolution of the perturbed Boltzmann equation. ©1995 American Institute of Physics.
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