Microstructure of Silicon Carbide Whiskers Synthesized by Carbothermal Reduction of Silicon Nitride
作者:
Hongyu Wang,
Yolande Berta,
Gary S. Fischman,
期刊:
Journal of the American Ceramic Society
(WILEY Available online 1992)
卷期:
Volume 75,
issue 5
页码: 1080-1084
ISSN:0002-7820
年代: 1992
DOI:10.1111/j.1151-2916.1992.tb05541.x
出版商: Blackwell Publishing Ltd
关键词: silicon carbide;whiskers;microstructure;crystal growth;silicon nitride
数据来源: WILEY
摘要:
The microstructure of silicon carbide whiskers synthesized by carbothermal reduction of silicon nitride has been studied using transmission electron microscopy. All of the whiskers examined are single crystals, and grow in the (111) crystallographic direction. Two different forms of stacking faults and microtwins were observed; in one the planar defects are normal to the whisker growth direction, and the other has the defect planes at an angle of about 70° to the growth axis, while both forms of the defects are on the [111] closed‐packed planes. Without the addition of catalyst, droplets containing metallic impurities were not found at the tips of the whiskers synthesized by the present process. A core and outer regions were observed in the single‐crystal whiskers, which may be evidence that the whiskers were formed by a two‐stage mec
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