Ar ion implant damage gettering of generation impurities in silicon employing voltage ramping and nitrogen backscattering
作者:
B.Golja,
A.G.Nassibian,
期刊:
IEE Journal on Solid-State and Electron Devices
(IET Available online 1979)
卷期:
Volume 3,
issue 5
页码: 127-132
年代: 1979
DOI:10.1049/ij-ssed.1979.0027
出版商: IEE
数据来源: IET
摘要:
The effects of Ar-ion implant gettering has been investigated using the linear voltage ramp applied to m.o.s. capacitors. A comparison is made with control (not implanted) samples and N+-ion Rutherford backscattering is used to examine the precipitation of generation impurities by the damaged layers. The gettering anneals were carried out over the temperature range 950°C–1100°C and for various times from 15 min to 120 min. It is shown that long gettering anneal times and high anneal temperatures both have a detrimental effect on minority-carrier lifetime.
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