Extremely low threshold current strained InGaAs/AlGaAs lasers by molecular beam epitaxy
作者:
R. L. Williams,
M. Dion,
F. Chatenoud,
K. Dzurko,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 58,
issue 17
页码: 1816-1818
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.105098
出版商: AIP
数据来源: AIP
摘要:
Using solid source molecular beam epitaxy we have grown strained layer InGaAs/AlGaAs graded index separate confinement heterostructure lasers operating at 1.01 &mgr;m. For broad‐area, uncoated Fabry–Perot devices with cavity lengths in excess of 3000 &mgr;m, the threshold current density is 56 A/cm2, a value which we believe to be the lowest ever reported for laser diodes in any materials system. The internal quantum efficiency for these lasers is 88%, while the materials losses are 1.8 cm−1.
点击下载:
PDF
(291KB)
返 回