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Small‐area high‐speed InP/InGaAs phototransistor

 

作者: J. C. Campbell,   C. A. Burrus,   A. G. Dentai,   K. Ogawa,  

 

期刊: Applied Physics Letters  （AIP Available online 1981）
卷期: Volume 39, issue 10  

页码: 820-821

 

ISSN:0003-6951

 

年代: 1981

 

DOI:10.1063/1.92570

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We describe the fabrication and characteristics of a small‐area (diameter ≃20 &mgr;m) InP/InGaAs heterojunction phototransistor, a promising photodetector/preamplifier for long‐wavelength optical receivers. The high sensitivity (hfe≃100 at 20‐nW incident power) and small junction capacitance (≲0.2 pF) of the device combine to produce a gain‐bandwidth product in excess of 1.7 GHz.

 

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