首页   按字顺浏览 期刊浏览 卷期浏览 Influence of defects on photoluminescence of InSe
Influence of defects on photoluminescence of InSe

 

作者: Kazuaki Imai,   Kazuhiko Suzuki,   Tetsuya Haga,   Yutaka Abe,  

 

期刊: Journal of Applied Physics  （AIP Available online 1986）
卷期: Volume 60, issue 9  

页码: 3374-3376

 

ISSN:0021-8979

 

年代: 1986

 

DOI:10.1063/1.337709

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Spatial distribution of defects near the cleaved surface of InSe is determined by means of the ion‐channeling technique. The luminescence spectra of InSe crystals with low defect concentration show three lines above 1.330 eV at 14 K. The specimens with high defect concentration show broad emission peaks at around 1.32 eV.

 

点击下载:  PDF (265KB)



返 回