Correlation between 1/fnoise and interface state density at the Fermi level in field‐effect transistors
作者:
Herman E. Maes,
Sabir H. Usmani,
Guido Groeseneken,
期刊:
Journal of Applied Physics
(AIP Available online 1985)
卷期:
Volume 57,
issue 10
页码: 4811-4813
ISSN:0021-8979
年代: 1985
DOI:10.1063/1.335297
出版商: AIP
数据来源: AIP
摘要:
New evidence is given for the validity of the number fluctuation model in explaining the 1/fnoise behavior of field‐effect transistors and for the direct proportionality between the oxide trap density and the interface state density at the Fermi level. This evidence is obtained from the determination of the energy distribution of the interface states in small size metal‐nitride‐oxide‐silicon transistors by the modified charge pumping technique.
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