In situreflectance difference spectroscopy of N-plasma doped ZnTe grown by molecular beam epitaxy
作者:
D. Stifter,
M. Schmid,
K. Hingerl,
A. Bonanni,
M. Garcia-Rocha,
H. Sitter,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 26
页码: 3857-3859
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.122916
出版商: AIP
数据来源: AIP
摘要:
In situreflectance difference spectroscopy (RDS) has been performed during growth and nitrogen-doping of ZnTe thin films fabricated by molecular beam epitaxy. The doping level of the ZnTe samples can be determined by evaluating the RD spectra in the vicinity of theE1andE1+&Dgr;1transitions. RDS features in this spectral range were used to optimize online the doping performance of the N-plasma cell. Furthermore, doping-induced surface processes have been investigated, like surface saturation with activated N species and surface Fermi level pinning occurring at ambient pressure. ©1998 American Institute of Physics.
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