Plasma‐enhanced CVD requires close control of the plasma power density for reproducibility of both deposition rate and spatial uniformity in a radial‐flow reactor. Frequently the low rf power levels needed are not adequately controlled by the output power control of the relatively high power rf generator found in most commercial multipurpose plasma etch/deposition systems. This paper describes very simple and inexpensive broadband optical monitoring of the plasma emission for improved control sensitivity. The technique has the advantage of directly monitoring the plasma intensity, avoiding effects of variable power transmission losses between the rf generator and the plasma. Application to the control of low power plasma‐enhanced CVD of ‘‘SiO2’’ from Ar:SiH4:N2O plasmas, where the monitor signal is almost entirely due to near infrared Ar emission, is described.