Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
作者:
Shuji Nakamura,
Masayuki Senoh,
Shin-ichi Nagahama,
Naruhito Iwasa,
Takao Yamada,
Toshio Matsushita,
Yasunobu Sugimoto,
Hiroyuki Kiyoku,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 11
页码: 1417-1419
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118593
出版商: AIP
数据来源: AIP
摘要:
The continuous-wave (cw) operation of InGaN multi-quantum-well structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 27 h. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6kA/cm2. Longitudinal modes with a mode separation of 0.042 nm were observed under cw operation at RT. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed between adjacent quantum well or quantum dot subbands. The carrier lifetime and the threshold carrier density were estimated to be 10 ns and2×1020/cm3, respectively. ©1997 American Institute of Physics.
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