Silicon vapor phase epitaxial growth catalysis by the presence of germane
作者:
P. M. Garone,
J. C. Sturm,
P. V. Schwartz,
S. A. Schwarz,
B. J. Wilkens,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 13
页码: 1275-1277
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.102535
出版商: AIP
数据来源: AIP
摘要:
Experiments involving the epitaxial growth of GexSi1−xfilms by chemical vapor deposition have shown that the addition of germane greatly enhances the growth rate, compared to that seen with dichlorosilane alone. Careful analysis shows that the increase is not accounted for by summing the individual growth rates, but clearly indicates that the silicon growth rate is catalyzed. The magnitude of the effect increases at lower temperatures, with a two orders of magnitude increase seen at 625 °C.
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