Low-frequency noise of the leakage current in undoped low-pressure chemical vapor deposited polycrystalline silicon thin-film transistors
作者:
C. A. Dimitriadis,
J. Brini,
G. Kamarinos,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 7
页码: 880-882
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118239
出版商: AIP
数据来源: AIP
摘要:
The origin of the leakage current in low-pressure chemically vapor deposited polycrystalline silicon (polysilicon) thin-film transistors is investigated by low-frequency noise measurements. The leakage current depends on the structure of the polysilicon layer. When the grain size is relatively large (about 120 nm), the noise spectra show a pure1/fbehavior caused by carrier fluctuation within the space charge region of the drain junction. For smaller grain size (about 50 nm), the observed1/f1.5spectra are attributed to thermal noise of the bulk polysilicon film. ©1997 American Institute of Physics.
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