Shallow silicidedn+pjunctions have been formed by implanting arsenic ions into Pt or PtSi films followed by low‐temperature furnace annealing in the N2ambient. Shallow junction diodes with a junction depth of about 0.1 &mgr;m, a forward ideality factor lower than 1.02, and a reverse leakage current density less than 5 nA/cm2at −5 V was achieved with 750 °C, 90‐min annealing. Annealing at higher temperatures results in junction degradation due to Pt diffusion from PtSi into the Si substrate. This may be significantly improved by F+implantation following the As+implantation. The shallow junction processed with the As+/F+dual implantation and a subsequent anneal at 800 °C shows even slightly better characteristics than those annealed at 750 °C without F+implantation.